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| STC5DNF30V Dual N-channel 30V - 0.032 - 4.5A - TSSOP8 2.7V-Driver STripFETTM Power MOSFET General features Type STC5DNF30V VDSS 30V RDS(on) < 0.035 (@4.5V) < 0.040 (@2.7V) ID 4.5A Standard outline for easy automated surface mount assembly Ultra low threshold gate drive (2.7V) TSSOP8 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. No electrical connections are shared between mosfets. Internal schematic diagram Applications Switching application Order codes Part number STC5DNF30V Marking C5DNF30V Package TSSOP8 Packaging Tape & reel April 2006 Rev 1 1/12 www.st.com 12 Contents STC5DNF30V Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STC5DNF30V Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at tc = 25C Value 30 8 4.5 2.8 18 1.3 Unit V V A A A W ID (1) IDM(2) PTOT 1. (1) When mounted on FR-4 board with 1inch pad, 2 Oz of Cu and t<10sec. 2. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter Value 120 97.5 -55 to 150 -55 to 150 Unit C/W C/W C C Rthj-pcb(1) Thermal resistance junction-pcb max Rthj-pcb(2) Thermal resistance junction-pcb max Tj Tstg Operating junction temperature Storage temperature 1. When mounted on minimum recommended footprint. 2. When mounted on FR-4 board with 1inch pad, 2 Oz of Cu and t<10sec. 3/12 Electrical characteristics STC5DNF30V 2 Electrical characteristics (TJ =25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off Parameter Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate-body leakage current (V DS = 0) Gate threshold voltage Test conditions ID = 250A, V GS = 0 VDS = Max rating VDS = Max rating,TC=125C VGS = 8V VDS = VGS, ID = 250A 0.6 0.032 0.036 0.035 0.040 Min. 30 1 10 100 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Static drain-source on VGS = 4.5V, ID = 2.3A resistance VGS = 2.7V, ID = 2.3A Table 4. Symbol gfs Ciss Coss Crss Qg Q gs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V ; ID = 2.3A Min. Typ. 9.5 460 200 50 8.5 1.8 2.4 11.5 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 VDD = 16V, ID = 4.5A, VGS = 4.5V (see Figure 14) ns ns ns Table 5. Symbol td(on) tr td(off) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 10V, ID = 2.3A, RG= 4.7 V GS = 4.5V (see Figure 13) VDD = 16V, ID = 2.3A, RG = 4.7, V GS = 4.5V (see Figure 17) Min. Typ. 7 33 27 10 26 11 21 Max. Unit ns ns ns ns ns ns ns 4/12 STC5DNF30V Electrical characteristics Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 4.5A, VGS = 0 26 13 1 Test conditions Min. Typ. Max. 4.5 18 1.2 Unit A A V ns nC A ISD = 4.5A, di/dt =100A/s, Reverse recovery time Reverse recovery charge VDD = 10V, T j = 150C Reverse recovery current (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 5/12 Electrical characteristics STC5DNF30V 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STC5DNF30V Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate thereshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Thermal resistance and max power 7/12 Test circuits STC5DNF30V 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 STC5DNF30V Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STC5DNF30V TSSOP8 MECHANICAL DATA mm. MIN. 1.05 0.05 0.80 0.19 0.127 2.90 4.30 6.20 5.14 0.65 0.45 0.90 0.09 0.09 0 8 12 0.75 1.10 0.018 0.0355 0.004 0.004 0 8 3.10 4.50 6.60 5.24 0.114 0.170 0.240 0.202 0.025 0.030 0.0433 TYP MAX. 1.20 0.15 1.05 0.30 MIN. 0.041 0.002 0.032 0.008 0.005 0.122 0.177 0.260 0.206 inch TYP. MAX. 0.047 0.006 0.041 0.012 DIM. A A1 A2 b c D E E1 E2 e L L1 R R1 1 2 10/12 STC5DNF30V Revision history 5 Revision history Table 7. Date 11-Apr-2006 Revision 1 First release Changes 11/12 STC5DNF30V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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